SSM3J01T 2007-11-01 1 toshiba field effect transistor silicon p channel mos type SSM3J01T power management switch high speed switching applications ? small package ? low on resistance : r on = 0.4 ? (max) (@v gs = ? 4 v) : r on = 0.6 ? (max) (@v gs = ? 2.5 v) ? low gate threshold voltage absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds ?30 v gate-source voltage v gss 10 v dc i d ?1.7 drain current pulse i dp (note 2) ?3.4 a drain power dissipation (ta = 25 c) p d (note 1) 1250 mw channel temperature t ch 150 c storage temperature range t stg ?55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/v oltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 , t = 10 s) note 2: the pulse width limited by max channel temperature. handling precaution when handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrosta tic electricity. operators sh ould wear anti-static clothing, and containers and other objects that come into direct contact with devi ces should be made of anti-static materials. the channel-to-ambient thermal resistance r th (ch-a) and the drain power dissipation p d vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. when using this device, please take heat dissipation fully into account. marking equivalent circuit unit: mm jedec D jeita D toshiba 2-3s1a weight: 10 mg (typ.) 3 1 2 d e 3 12
SSM3J01T 2007-11-01 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 10 v, v ds = 0 ? ? 1 a drain-source breakdown voltage v (br) dss i d = ?1 ma, v gs = 0 ?30 ? ? v drain cut-off current i dss v ds = ?30 v, v gs = 0 ? ? ?1 a gate threshold voltage v th v ds = ?3 v, i d = ?0.1 ma ?0.6 ? ? 1.1 v forward transfer admittance |y fs | v ds = ?3 v, i d = ? 0.85 a (note3) 1.2 2.3 ? s drain-source on resistance r ds (on) i d = ?0.85 a, v gs = ? 4 v (note3) ? 0.3 0.4 drain-source on resistance r ds (on) i d = ?0.85 a, v gs = ? 2.5 v (note3) ? 0.4 0.6 input capacitance c iss v ds = ?10 v, v gs = 0, f = 1 mhz ? 240 ? pf reverse transfer capacitance c rss v ds = ?10 v, v gs = 0, f = 1 mhz ? 24 ? pf output capacitance c oss v ds = ?10 v, v gs = 0, f = 1 mhz ? 94 ? pf turn-on time t on ? 36 ? switching time turn-off time t off v dd = ?15 v, i d = ?0.3 a v gs = 0~ ?2.5 v, r g = 4.7 ? 37 ? ns note3: pulse test switching time test circuit precaution v th can be expressed as voltage between gate and source when low operating current value is i d = ? 100 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consid eration for using the device. t on t off 0 v ?2.5 v v dd v ds (on) t r t f 10% 90% 90% 10% (b) v in v gs (c) v out v ds v dd = ?15 v r g = 4.7 d.u. < = 1% v in : t r , t f < 5 ns common source ta = 25c 0 ?2.5 v in out v dd 10 s r g (a) test circuit
SSM3J01T 2007-11-01 3 i d ? v ds i d ? v gs r ds (on) ? i d r ds (on) ? ta c ? v ds ? 25c ? 10000 ? 0.01 0 common source v ds = ? 3 v ? 100 ? 1000 ? 1 ? 10 ? 0.1 ? 1.5 ? 2 ? 0.5 ? 1 ? 2.5 ? 3 ta = 100c 25c 0 1 0.2 0.4 0.8 0.6 common source ta = 25c 0 ? 0.5 ? 1 ? 1.5 ? 2 v gs = ? 2.5 v ? 4 v common source i d = ? 0.85 a 0 150 100 50 v gs = ? 2.5 v ? 4 v 0 1 0.2 0.4 0.8 0.6 10 ? 0.1 1000 100 ? 100 ? 10 common source v gs = 0 f = 1 mhz ta = 25c 1 ? 1 c rss c oss c iss 0 0 common source ta = 25c ? 1.6 v v gs = ? 1.4 v ? 2 ? 1.8 ? 1.6 ? 0.5 ? 1 ? 1.5 ? 2 ? 4 v ? 1.8 v ? 2.0 v ? 2.2 v ? 2.5 v ? 0.6 ? 0.4 ? 0.2 ? 1.2 ? 1.0 ? 0.8 ? 1.4 |y fs | ? i d 0.01 ? 0.001 1 0.1 ? 10 ? 0.1 ? 1 ? 0.01 10 100 common source v ds = ? 3 v ta = 25c drain-source on resistance rds (on) ( ) drain current i d (a) drain current i d (ma) drain-source on resistance r ds (on) ( ) drain-source voltage v ds (v) gate-source voltage v gs (v) drain current i d (a) ambient temperature ta (c) forward transfer admittance |y fs | (s) drain current i d (a) capacitance c (pf) drain-source voltage v ds (v)
SSM3J01T 2007-11-01 4 t ? i d p d ? ta 10 ? 0.001 common source v dd = ? 15 v v gs = 0~ ? 2.5 v r g = 4.7 ta = 25c 10000 t r t on t f t off 1000 ? 0.01 ? 1 100 ? 01 1.5 0 0 mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) t = 10 s dc 1 0.75 25 50 75 125 150 1.25 0.5 0.25 100 ? 0.01 ? 0.1 ? 10 ? 1 ? 1 ? 100 ? 0.1 ? 0.001 ? 10 mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) dc operation i d max (pulsed) i d max ( continuous ) 10 ms * 1 ms * 10 s * ta = 25 c * : single nonrepetitive pulse ta = 25c curves must be derated linearly with increase in temperature. v dss max switching time t (ns) drain power dissipation p d (w) drain current i d (a) drain current i d (a) ambient temperature ta (c) safe operating area pulse width tw (s) transient thermal impedance r th (c /w) r th ? tw 1 0.001 single pulse mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) 1000 0.01 0.1 1 10 100 10 100 1000 drain-source voltage v ds (v)
SSM3J01T 2007-11-01 5 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before creating and producing des igns and using, customers mus t also refer to and comply with (a) the latest versions of all re levant toshiba information, including without limitation, this d ocument, the specifications, the data sheets and applic ation notes for product and the precautions and conditions set forth in the ?tosh iba semiconductor reliability handbook? and (b) t he instructions for the application that product will be used with or for. custome rs are solely responsible for all aspects of t heir own product design or applications, incl uding but not limited to (a) determining th e appropriateness of the use of this product in such design or applications; (b) evaluating and det ermining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? a bsent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability whatsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? do not use or otherwise make available product or related so ftware or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or m anufacturing of nuclear, chemical , or biological weapons or missi le technology products (mass destruction w eapons). product and related software and technology may be controlled under the japanese foreign exchange and foreign trade law and the u.s. expor t administration regulations. ex port and re-export of product or related software or technology are strictly prohibited exc ept in compliance with all applicable export laws and regulations. ? please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of pro duct. please use product in compliance with all applicable laws and regula tions that regulate the inclusion or use of controlled subs tances, including without limitation, the eu rohs directive. toshiba assumes no liability for damages or losses occurring as a result o f noncompliance with applicable laws and regulations.
|
